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Infineon and Resonac Strengthen Ties to Accelerate SiC Power Semiconductor Development and Production

On 12 January 2023, Infineon Technologies fortified its relationship with Resonac (formerly Showa Denko) by signing an extended multi-year supply and cooperation agreement concerning silicon carbide (SiC) materials utilised in SiC power semiconductors. This agreement builds upon the sales and co-development deal established in 2021.

In May 2021, Infineon revealed its contract with Resonac, which encompassed a variety of SiC materials, including epitaxy. The new deal serves to complement and augment the initial agreement.

As per the terms of the agreement, Resonac will supply Infineon with the requisite SiC materials for manufacturing SiC power semiconductors, accounting for a substantial share of the predicted demand over the next decade. Initially, Resonac will provide 6-inch (150mm) SiC material, facilitating the transition to 8-inch (200mm) at a later stage. Additionally, Infineon will grant Resonac access to intellectual property associated with its SiC materials technology. Infineon posits that this partnership will bolster supply chain stability and support the swift growth of SiC.

To achieve its target of a 30% market share by 2030, Infineon intends to augment its SiC manufacturing capacity tenfold by 2027. The firm is constructing a new SiC and gallium nitride (GaN) facility in Kulim, Malaysia, slated to commence production in 2024. This large-scale production strategy will complement the existing Villach base in Austria.

Peter Wawer, President of Infineon’s Industrial Power Control Division, highlighted the substantial business opportunities in sectors such as renewable energy generation and storage

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