In the rapidly evolving field of power electronics, wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are gaining prominence. These materials, known for their superior energy efficiency, are projected to capture a significant market share in the power semiconductor sector, potentially reaching 45% by 2035.
The interest in WBG semiconductors was evident at the “Japan-Germany October Technology Exchange Meeting” hosted by the German Chamber of Commerce and Industry in Japan in October 2023. During this event, Professor Hiroshi Amano of Nagoya University, a Nobel laureate recognized for his development of blue LEDs, discussed the future of GaN technology. He emphasized its potential to contribute significantly to a decarbonized society by enhancing energy efficiency in applications such as electric vehicles (EVs).
GaN technology, already prevalent in LED lighting, faces unique challenges and opportunities as it transitions to more demanding applications like automotive power devices. The technology’s evolution is marked by advancements in substrate manufacturing, moving from GaN on various bases to lower-dislocation GaN substrates that significantly reduce defect densities. This progression supports the development of more reliable and efficient power devices.
Research efforts in Japan are advancing both sodium flux and ammonothermal methods for GaN substrate growth, aiming to scale up production sizes and reduce costs. These technological strides are crucial as the industry seeks to overcome inherent material challenges such as dislocations that can lead to leakage currents in GaN devices.
The development of GaN technology is not just about enhancing material properties but also about integrating these advancements into commercially viable products. This involves refining manufacturing processes to lower costs and improve device performance, potentially impacting a wide range of industries from automotive to future telecommunications.
As the technology matures, the focus is increasingly on collaborative research and development efforts across the globe to harness GaN’s full potential and contribute to broader energy-saving goals. By 2030, initiatives like the GaN Consortium aim to achieve significant reductions in energy usage through the application of GaN devices, highlighting the critical role of innovation in sustainability.
