Gallium oxide (GA2O3) is emerging as a noteworthy next-generation power semiconductor material, succeeding SiC and GaN, with firms and organisations globally vying to develop gallium oxide technology. However, Japan and China currently lead the pack in the patent race.
A recent 'Gallium Oxide Power Semiconductor Technology Roadmap Seminar' at the Korea Semiconductor Industry Association headquarters in Pangyo explored gallium oxide's potential. Like SiC and GaN, gallium oxide is a wide bandgap (WBG) material, regarded as a cutting-edge power semiconductor material. A wider bandgap enables superior electron mobility, facilitating higher voltages, temperatures, and frequencies.
Gallium oxide's bandgap. . .
